Electrical characteristics of TiO2/ZrSixOy stack gate dielectric for metal-oxide-semiconductor device applications

This short note describes a unique process for the preparation of high-quality titanium oxide (TiO2) With zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional chemical oxide and oxynitride as an interfacial layer, titanium oxide (TiO2) metal-oxide-semiconductor (MOS) capacitors with zirconium silicate (ZrSixOy) as an interfacial layer exhibit lower leakage current levels at the same equivalent oxide thickness. We were able to confirm the achievement of the TiO2/ZrSixOy stack structure by Auger electron spectroscopy (AES) and transmission electron microscope (TEM) analysis. The equivalent oxide thickness (EOT) and leakage current density at the gate bias I V below the flatband voltage (V-PB) were 10.3 Angstrom and 1 mA/cm(2), respectively, The zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications.