Dopant-Free Planar n-i-p Perovskite Solar Cells with Steady-State Efficiencies Exceeding 18%

被引：71

作者：

Habisreutinger, Severin N. ^{[1
]}

Wenger, Bernard ^{[1
]}

Snaith, Henry J. ^{[1
]}

Nicholas, Robin J. ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Dept Phys, Parks Rd, Oxford OX1 3PU, England

来源：

ACS ENERGY LETTERS | 2017年 / 2卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

HOLE-TRANSPORT MATERIALS; HIGHLY EFFICIENT; ANOMALOUS HYSTERESIS; LITHIUM-SALTS; PERFORMANCE; EXTRACTION; ABSORBER; MOBILITY; LAYER;

D O I：

10.1021/acsenergylett.7b00028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this Letter, we demonstrate a planar n-i-p perovskite solar cell design with a steady-state efficiency of up to 18.8% in the absence of any electronic dopants. In the device stack, solution-processed SnO2 is used as an electron-accepting n-type layer. The absorber layer is a perovskite with both mixed organic A-site cations and mixed halides (FA(0.83)MA(0.17)Pb(I0.83Br0.17)(3)). The hole-transporting p-type layer is a double-layer structure of polymer-wrapped single-walled carbon nanotubes and undoped spiro-OMeTAD. We show that this approach can deliver steady-state efficiencies as high as and even higher than those of traditionally doped spiro-OMeTAD, providing a pathway for dopant-free perovskite solar cells crucial for long-term stability. [GRAPHICS]

引用

页码：622 / 628

页数：7

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