Low-driving-voltage band-operation LiNbO3 modulator with lightwave reflection and double-stub structure

被引：8
作者：
Kawanishi, T
Oikawa, S
Higuma, K
Matsuo, Y
Izutsu, M
机构：
[1] Basic & Adv Res Div, Commun Res Lab, Tokyo 1848795, Japan
[2] Sumitomo Osaka Cement, New Technol Res Labs, Funabashi, Chiba 2748801, Japan
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 20期
关键词：
D O I：
10.1049/el:20020802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A reflection-type Mach-Zehnder LiNbO3 optical modulator with a double-stub structure that can modulate both forward and backward lightwave to achieve low-driving-voltage optical modulation for band-operation is developed. Using optical reflection the modulation efficiency is doubled. The halfwave-voltage of the fabricated modulator was 2.9 V at 7 GHz.
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收藏
页码：1204 / 1205
页数：2
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