Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

被引：50

作者：

Hamer, Matthew ^{[1
,2
]}

Tovari, Endre ^{[2
]}

Zhu, Mengjian ^{[1
]}

Thompson, Michael D. ^{[3
]}

Mayorov, Alexander ^{[4
]}

Prance, Jonathon ^{[3
]}

Lee, Yongjin ^{[5
]}

Haley, Richard P. ^{[3
]}

Kudrynskyi, Zakhar R. ^{[6
]}

Patane, Amalia ^{[6
]}

Terry, Daniel ^{[1
,2
]}

Kovalyuk, Zakhar D. ^{[7
]}

Ensslin, Klaus ^{[5
]}

Kretinin, Andrey, V ^{[2
,8
]}

Geim, Andre ^{[1
]}

Gorbachev, Roman ^{[1
,2
]}

机构：

[1] Univ Manchester, Sch Phys, Oxford Rd, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Natl Graphene Inst, Oxford Rd, Manchester M13 9PL, Lancs, England

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YW, England

[4] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore

[5] ETH, Solid State Phys Lab, Otto Stern Weg 1, CH-8093 Zurich, Switzerland

[6] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[7] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine

[8] Univ Manchester, Sch Mat, Oxford Rd, Manchester M13 9PL, Lancs, England

来源：

NANO LETTERS | 2018年 / 18卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Two-dimensional materials; quantum dots; quantum point contacts; charge quantization; indium selenide; electronic devices; TRANSITION; MOS2; CROSSOVER; EXCITONS; CONTACTS; MOBILITY;

D O I：

10.1021/acs.nanolett.8b01376

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Indium selenide, a post-transition metal chalco-genide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

引用

页码：3950 / 3955

页数：6

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