10-Gb/s Direct Modulation up to 100 °C Using 1.3-μm-Range Metamorphically Grown Strain Compensated InGaAs-GaAs MQW Laser on GaAs Substrate

被引：3

作者：

Arai, Masakazu ^{[1
]}

Tadokoro, Takashi ^{[1
]}

Fujisawa, Takeshi ^{[1
]}

Kobayashi, Wataru ^{[1
]}

Nakashima, Kiichi ^{[1
]}

Yuda, Masahiro ^{[1
]}

Kondo, Yasuhiro ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 18期

关键词：

Direct modulation; heteroepitaxy; metamorphic growth; quasi-InGaAs substrate; uncooled laser; QUANTUM-WELL LASERS; OPERATION;

D O I：

10.1109/LPT.2009.2026488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have realized 10-Gb/s direct modulation up to 100 degrees C using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mu m-range lasing and an increased number of QWs (six). This laser with a 200-mu m-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25 degrees C and 100 degrees C, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85 degrees C.

引用

页码：1344 / 1346

页数：3

共 5 条

[1] Uncooled (25-85 °C) 10-Gbps operation of 1.3-μm-range metamorphic InGaAs laser on GaAs substrate
Arai, Masakazu
Tadokoro, Takashi
Kobayashi, Wataru
Fujisawa, Takeshi
Nakashima, Kiichi
Yuda, Masahiro
Kondo, Yasuhiro
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 226 - 229
[2] Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate
Arai, M.
Tadokoro, T.
Fujisawa, T.
Kobayashi, W.
Nakashima, K.
Yuda, M.
Kondo, Y.
ELECTRONICS LETTERS, 2009, 45 (07) : 359 - U27
[3] 10-Gb/s and 10-km error-free transmission up to 100°C with 1.3-μm wavelength wafer-fused VCSELs
Mereuta, Alexandru
Suruceanu, Grigore
Caliman, Andrei
Iacovlev, Vladimir
Sirbu, Alexei
Kapon, Eli
OPTICS EXPRESS, 2009, 17 (15): : 12981 - 12986
[4] 3.125-Gb/s modulation up to 70 °C using 1.3-μm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications
Boucart, J
Suruceanu, G
Royo, P
Iakovlev, VI
Syrbu, A
Caliman, A
Mereuta, A
Mircea, A
Berseth, CA
Rudra, A
Kapon, E
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) : 571 - 573
[5] Low-Driving-Current High-Speed Direct Modulation up to 40 Gb/s Using 1.3-μm Semi-Insulating Buried-Heterostructure AlGaInAs-MQW Distributed Reflector (DR) Lasers
Otsubo, K.
Matsuda, M.
Okumura, S.
Uetake, A.
Ekawa, M.
Yamamoto, T.
OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5, 2009, : 1743 - 1745

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