High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

The high-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts was investigated at 400 degrees C in N-2 ambient. The results showed that the single stage amplifier remained a stable voltage gain after 100 h of aging at 400 degrees C. Based on the transfer length method, the Ni/Nb/n-type 4H-SiC ohmic contact exhibited the excellent stability after being aged at 400 degrees C for 100 h. Whereas, the stability of electrical characteristics indicated that the 4H-SiC MOSFET also exhibited a good stability when operating in high temperature environment. Moreover, the stability of the electrical characteristics of the 4H-SiC MOS capacitor showed that the reliability of the Ni/Nb/4H-SiC ohmic contact played important role in reliability of SiC based devices. These results indicate that the fabrication process of the integrated circuits based on 4H-SiC devices with Ni/Nb ohmic contacts is promising to apply for high temperature as well as harsh environment applications.