Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning

被引：9
|
作者：
Zhang, Dawei [1 ]
Sando, Daniel [1 ,2 ,3 ]
Pan, Ying [1 ]
Sharma, Pankaj [1 ,2 ]
Seidel, Jan [1 ,2 ]
机构：
[1] UNSW Sydney, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] UNSW Sydney, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia
[3] UNSW Sydney, Mark Wainwright Analyt Ctr, High St, Kensington, NSW 2052, Australia
来源：
JOURNAL OF APPLIED PHYSICS | 2021年 / 129卷 / 01期
基金：
澳大利亚研究理事会;
关键词：
BEHAVIOR;
D O I：
10.1063/5.0029620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Robust retention of ferroelectric polarization in harsh environments is a requirement for the application of ferroelectric materials in space, liquids, and various chemical conditions. Surface screening of the polarization can significantly alter domain states and usually has a strong influence on domain stability in ferroelectrics, hindering applications that require defined and non-volatile polarization states. Here, we show that designer defects in BiFeO3 can be engineered to strongly pin domain walls, which even in harsh environments such as 100% humidity and elevated temperatures of 175 degrees C leads to a superior polarization retention of several years for domain sizes well below 100nm.
引用
收藏
页数：6
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