Growth of deep UV light emitting diodes by metalorganic chemical vapor deposition

We demonstrate high power AlGaN based ultraviolet light-emitting diodes (UV LEDs) with an emission wavelength of 280 rim using an asymmetric single quantum well active layer configuration on top of a high-quality AlGaN/AlN template layer grown by metalorganic chemical vapor deposition (MOCVD). An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 mum x 300 mum diode. This device reached a high peak external quantuni efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. We also demonstrate high output power operation of AlGaN-based LTV LEDs at a short wavelength of 265 nm. An output power of 2.4 mW at a pulsed current of 360 mA was achieved for a single diode. A packaged array of four diodes produced 5.3 mW at 700 mA of pulsed current. The DC output power is 170 muW at 250 mA.