Statistical analysis of SRAM cell stability

被引：115

作者：

Agarwal, Kanak ^{[1
]}

Nassif, Sani ^{[1
]}

机构：

[1] IBM Res, Austin, TX 78758 USA

来源：

43RD DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2006 | 2006年

关键词：

performance; design; reliability; SRAM; stability; noise margin; modeling;

D O I：

10.1109/DAC.2006.229176

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The impact of process variation on SRAM yield has become a serious concern in scaled technologies. In this paper, we propose a methodology to analyze the stability of an SRAM cell in the presence of random fluctuations in the device parameters. We provide a theoretical framework for characterizing the DC noise margin of a memory cell and develop models for estimating the cell failure probabilities during read and write operations. The proposed models are verified against extensive Monte-Carlo simulations and are shown to match well over the entire range of the distributions well beyond the 3-sigma extremes.

引用

页码：57 / +

页数：2

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