Monte Carlo Study of Room-Temperature Ferromagnetism in C-Doped ZnO

被引:3
作者
Ha Viet Anh [1 ,2 ]
Dao Xuan Viet [1 ,2 ]
Nguyen Duc Trung Kien [1 ,2 ]
Pham Thanh Huy [1 ]
机构
[1] Hanoi Univ Sci & Technol, Adv Inst Sci & Technol, Hanoi 10307, Vietnam
[2] Hanoi Univ Sci & Technol, Int Res Inst Computat Sci & Engn, Hanoi 10307, Vietnam
关键词
Diluted magnetic semiconductors (DMS); discrete spin model; Heisenberg model; Monte Carlo (MC); zinc oxide; SPIN; SEMICONDUCTORS; SIMULATIONS;
D O I
10.1109/TMAG.2014.2303780
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The room-temperature ferromagnetism of diluted magnetic semiconductors (DMS) doped with light elements has been extensively studied for potential applications in spintronic devices. The existence and stability of ferromagnetism of DMS with low concentration regime is an interesting topic, followed by researches using both Monte Carlo (MC) simulation and first-principle calculations. Both continuous and discrete spin models were developed to describe the ferromagnetic phase but it is still unclear, which one produces a better outcome. To clarify the issue of a continuous spin model versus a discrete spin model, we have performed a large-scale MC simulation of C-doped ZnO system. We found that the discrete spin model exhibit magnetic phase transition at near room-temperature while the continuous spin model does not show phase transition in the investigated low temperature range.
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页数:4
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