Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC

被引：4
作者：
Roccaforte, F
La Via, F
Baeri, A
Raineri, V
Calcagno, L
Mangano, F
机构：
[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词：
Ni/Ti bilayers; Schottky diodes; silicides;
D O I：
10.4028/www.scientific.net/MSF.457-460.865
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the effects of thermal treatments on the structural and electrical properties of the system Ni/Ti/6H-SiC were studied. Ni/Ti bilayers were prepared by e-beam evaporation onto 6H-SiC substrates and annealed under vacuum between 400 and 650degreesC. Above 450degreesC a solid state reaction involving the metallic bilayer started and resulted in the formation of nickel and titanium silicides. The electrical characterization of the metal contact showed an increase of the Schottky barrier, from a value of 0.91 eV (typical of Ti) in the as deposited, towards 1.39 eV (typical of Ni2Si) in the high temperature annealed samples, along with a decrease of the device leakage current. The results, beyond giving interesting insights into the complicated reaction mechanism of the Ni/Ti system with SiC, may find applications in the control of the electrical properties of Schottky barriers on SiC.
引用
收藏
页码：865 / 868
页数：4
相关论文
共 13 条
[1]  
BALIGA BJ, 1987, MODERN POWER DEVICES
[2]   Formation of Ni silicides on (001)Si with a thin interposing Pt layer [J].
Cheng, LW ;
Cheng, SL ;
Chen, LJ ;
Chien, HC ;
Lee, HL ;
Pan, FM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1176-1179
[3]   Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers [J].
Defives, D ;
Noblanc, O ;
Dua, C ;
Brylinski, C ;
Barthula, M ;
Aubry-Fortuna, V ;
Meyer, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :449-455
[4]   Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide [J].
La Via, F ;
Roccaforte, F ;
Makhtari, A ;
Raineri, V ;
Musumeci, P ;
Calcagno, L .
MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) :269-282
[5]   Effect of a Mo interlayer on the electrical and structural properties of nickel silicides [J].
Ok, YW ;
Choi, CJ ;
Seong, TY .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (07) :G385-G388
[6]   A CRITICAL-REVIEW OF OHMIC AND RECTIFYING CONTACTS FOR SILICON-CARBIDE [J].
PORTER, LM ;
DAVIS, RF .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (2-3) :83-105
[7]  
Rhoderick EH., 1988, Metal-Semiconductor Contacts
[8]   Silicon carbide pinch rectifiers using a dual-metal Ti-Ni2Si Schottky barrier [J].
Roccaforte, F ;
La Via, F ;
La Magna, A ;
Di Franco, S ;
Raineri, V .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1741-1747
[9]   Improvement of high temperature stability of nickel contacts on n-type 6H-SiC [J].
Roccaforte, F ;
La Via, F ;
Raineri, V ;
Calcagno, L ;
Musumeci, P .
APPLIED SURFACE SCIENCE, 2001, 184 (1-4) :295-298
[10]   High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination [J].
Saxena, V ;
Su, JN ;
Steckl, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :456-464
12