Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field

被引：150

作者：

Guimaraes, M. H. D. ^{[1
]}

Zomer, P. J. ^{[1
]}

Ingla-Aynes, J. ^{[1
]}

Brant, J. C. ^{[1
]}

Tombros, N. ^{[1
]}

van Wees, B. J. ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 113卷 / 08期

关键词：

SPINTRONICS; TRANSPORT;

D O I：

10.1103/PhysRevLett.113.086602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 mu m even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is tau(perpendicular to)/tau(parallel to) approximate to 0.75 for zero applied perpendicular electric field. By tuning the electric field, this anisotropy changes to approximate to 0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.

引用

页数：5

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