Continuous analytic I-V model for surrounding-gate MOSFETs

被引：240
作者：
Jiménez, D
Iñíguez, B
Suñé, J
Marsal, LF
Pallarès, J
Roig, J
Flores, D
机构：
[1] Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, Spain
[2] Univ Rovira & Virgili, Escola Tecn Super Engn, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
[3] CSIC, CNM, Barcelona 08193, Spain
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 08期
关键词：
modeling; MOSFET; surrounding gate;
D O I：
10.1109/LED.2004.831902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.
引用
收藏
页码：571 / 573
页数：3
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