Scattering profile from a random distribution of dislocations in a charge density wave

被引：1
|
作者：
Kirova, N. [1 ]
Brazovskii, S. [2 ]
机构：
[1] Univ Paris Saclay, LPS, CNRS UMR 8502, F-91405 Orsay, France
[2] Univ Paris Saclay, LPTMS, CNRS UMR 8626, F-91405 Orsay, France
来源：
ANNALS OF PHYSICS | 2022年 / 447卷
关键词：
Electronic crystals; CDW; X-ray; Dislocations; Electronic vortices; CDW;
D O I：
10.1016/j.aop.2022.169130
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Dislocations are ubiquitous topological defects in charge density waves crystals. We present exact analytical calculation of the scattering intensity profile for a random array of dislocations which is performed within a generic vortex limit. We add results of numerical studies for a complete model which allows for variations of the amplitude, down to the zero at the dislocation core, including interactions with the electric field and normal carriers.(c) 2022 Published by Elsevier Inc.
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页数：9
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