Excitonic effect in resonant Raman scattering by 2LO-phonon in CdS and ZnSe

被引：3

作者：

Verma, P

Anand, S

Jain, KP

机构：

[1] Freiberg Univ Mining & Technol, Inst Theoret Phys, D-09596 Freiberg, Germany

[2] Indian Inst Technol, Dept Phys, New Delhi 110016, India

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 271卷 / 1-4期

关键词：

resonant Raman scattering; excitons; phonons; CdS; ZnSe;

D O I：

10.1016/S0921-4526(99)00241-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two-LO-phonon resonant Raman scattering has been performed on pure and doped CdS and ZnSe samples and the results are analyzed in terms of excitonic theory assuming correlated electron-hole pairs as intermediate states in the transition process. Good agreement with experimental results is found. The excitons involved in the intermediate transitions are short lived for the doped samples compared to the pure sample. The resonance profile for the doped samples can be better explained by considering the involvement of excitons with larger magnitudes of k. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 6

页数：6

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