High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

被引：294

作者：

Hwang, Wan Sik ^{[1
]}

Verma, Amit ^{[2
]}

Peelaers, Hartwin ^{[3
]}

Protasenko, Vladimir ^{[2
]}

Rouvimov, Sergei ^{[2
]}

Xing, Huili ^{[2
]}

Seabaugh, Alan ^{[2
]}

Haensch, Wilfried ^{[4
]}

Van de Walle, Chris G. ^{[3
]}

Galazka, Zbigniew ^{[5
]}

Albrecht, Martin ^{[5
]}

Fornari, Roberto ^{[5
,6
]}

Jena, Debdeep ^{[2
]}

机构：

[1] Korea Aerosp Univ, Dept Mat Engn, Gyeonggi 412791, South Korea

[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[4] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[5] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[6] Univ Parma, Dept Phys & Earth Sci, I-43124 Parma, Italy

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 20期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR; GROWTH;

D O I：

10.1063/1.4879800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 27 条

[1] A reinvestigation of beta-gallium oxide [J].