Adsorption properties of CdS-CdTe system semiconductors

被引:11
|
作者
Kirovskaya, I. A. [1 ]
Nor, P. E. [1 ]
机构
[1] Omsk State Tech Univ, Omsk 644000, Russia
关键词
semiconductors; adsorption; carbon monoxide; ammonia; solid solutions; nanofilms; piezoquartz microweighing;
D O I
10.1134/S003602441312011X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption of carbon(II) oxide and ammonia on nanofilms of solid solutions and binary compounds of the CdS-CdTe system is studied by means of piezoquartz microweighing, FTIR IR, and measuring electroconductivity. Allowing for the conditions and composition of semiconductor systems, we determine the mechanisms and principles of adsorption processes by analyzing the alpha (p) = f(T), alpha (T) = f(p), and alpha (T) = f(t) experimental dependences; IR spectra; the thermodynamic and kinetic characteristics of adsorption; the acid-base, electrophysical, and other characteristics of adsorbents; the electron nature of adsorbate molecules; and the obtained acid-base characteristics: the composition and adsorption characteristics and composition state diagrams. Previous statements on the nature and retention of local active centers responsible for adsorption and catalytic processes upon changes in their habitus and composition (as components of systems of the A(III)B(V)-A(II)B(VI) and A(II)B(VI)-A(II)B(VI) types) on the surface of diamond-like semiconductors are confirmed. Specific features of the behavior of (CdS) (x) (CdTe)(1 - x) solid solutions are identified in addition to general features with binary compounds (CdS, CdTe), as is demonstrated by the presence of critical points on acid-base characteristics-composition and adsorption characteristics-composition diagrams. On the basis of these diagrams, the most active adsorbents (with respect to CO and NH3) used in designing highly sensitive and selective sensors are identified.
引用
收藏
页码:2077 / 2081
页数:5
相关论文
共 50 条
  • [1] Adsorption properties of CdS-CdTe system semiconductors
    I. A. Kirovskaya
    P. E. Nor
    Russian Journal of Physical Chemistry A, 2013, 87 : 2077 - 2081
  • [2] OPTICAL PROPERTIES AND ENERGY STRUCTURE OF CDS-CDTE CRYSTALS
    KURIK, MV
    VITRIKHOVSKII, NI
    PHYSICA STATUS SOLIDI, 1966, 16 (02): : K139 - +
  • [3] The optical properties of the interface layer in CdS-CdTe heterojunctions
    Vatavu, SA
    Thin-Film Compound Semiconductor Photovoltaics, 2005, 865 : 183 - 189
  • [4] HIGH PRESSURE PHASE EQUILIBRIA OF SYSTEM CDS-CDTE
    GIELISSE, PJ
    YU, WC
    AMERICAN CERAMIC SOCIETY BULLETIN, 1969, 48 (04): : 412 - &
  • [5] PHASE-DIAGRAM OF CDS-CDTE PSEUDOBINARY SYSTEM
    OHATA, K
    SARAIE, J
    TANAKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1198 - 1204
  • [6] ELECTROLUMINESCENCE IN CDS-CDTE HETEROJUNCTIONS
    DULAK, W
    MECZYNSKA, H
    BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES MATHEMATIQUES ASTRONOMIQUES ET PHYSIQUES, 1975, 23 (06): : 725 - &
  • [7] Studies of photovoltaic properties of nanocrystalline thin films of CdS-CdTe
    Katiyar, Rajesh K.
    Sahoo, Satyaprakash
    Gaur, A. P. S.
    Singh, Arun
    Morell, G.
    Katiyar, R. S.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (41) : 10003 - 10006
  • [8] PHOTOVOLTAIC EFFECT IN CDS-CDTE JUNCTIONS
    YAMAGUCHI, K
    NAKAYAMA, N
    MATSUMOTO, H
    HIOKI, Y
    IKEGAMI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (09) : 1397 - 1398
  • [9] New Adsorbents Based on InP-CdTe and CdS-CdTe Systems and Their Comparative Properties
    Kirovskaya, I. A.
    Nor, P. E.
    Ekkert, A. O.
    Ekkert, R. V.
    Chernous, N. V.
    Kolesnikov, L. V.
    PROTECTION OF METALS AND PHYSICAL CHEMISTRY OF SURFACES, 2022, 58 (05) : 941 - 948
  • [10] THIN FILM CDS-CDTE HETEROJUNCTION DIODES
    DUTTON, RW
    MULLER, RS
    SOLID-STATE ELECTRONICS, 1968, 11 (08) : 749 - &