Highly Efficient Spin-Orbit Torque and Switching of Layered Ferromagnet Fe3GeTe2

被引:212
作者
Alghamdi, Mohammed [1 ]
Lohmann, Mark [1 ]
Li, Junxue [1 ]
Jothi, Palani R. [2 ]
Shao, Qiming [3 ]
Aldosary, Mohammed [1 ,5 ]
Su, Tang [4 ]
Fokwa, Boniface P. T. [2 ]
Shi, Jing [1 ]
机构
[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA
[3] Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA
[4] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[5] King Saud Univ, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
基金
美国国家科学基金会;
关键词
spin-orbit torque; van der Waals ferromagnets; 2D materials; anomalous Hall effect;
D O I
10.1021/acs.nanolett.9b01043
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spinorbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (T-c similar to 225 K), and electrostatic gate tunability offer a tantalizing possibility of achieving the ultimate high SOT limit in monolayer all-vdW nanodevices. In this study, we fabricate heterostructures of FGT/Pt with 5 nm of Pt sputtered onto the atomically flat surface of similar to 1523 nm exfoliated FGT flakes. The spin current generated in Pt exerts a damping-like SOT on FGT magnetization. At similar to 2.5 x 10(11) A/m(2) current density, SOT causes the FGT magnetization to switch, which is detected by the anomalous Hall effect of FGT. To quantify the SOT effect, we measure the second harmonic Hall responses as the applied magnetic field rotates the FGT magnetization in the plane. Our analysis shows that the SOT efficiency is comparable with that of the best heterostructures containing three-dimensional (3D) ferromagnetic metals and much larger than that of heterostructures containing 3D ferrimagnetic insulators. Such large efficiency is attributed to the atomically flat FGT/Pt interface, which demonstrates the great potential of exploiting vdW heterostructures for highly efficient spintronic nanodevices.
引用
收藏
页码:4400 / 4405
页数:6
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