Magnetization reversal process in thin Co nanowires

被引：41
|
作者：
Hausmanns, B [1 ]
Krome, TP [1 ]
Dumpich, G [1 ]
Wassermann, EF [1 ]
Hinzke, D [1 ]
Nowak, U [1 ]
Usadel, KD [1 ]
机构：
[1] Univ Duisburg Gesamthsch, D-47048 Duisburg, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期
关键词：
numerical simulation studies; magnetization reversal; nanostructures;
D O I：
10.1016/S0304-8853(01)00783-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields mu(0)H up to 4.5T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields H,, explained by the anisotropic magnetoresistance indicating the magnetization reversal process. Monte Carlo simulations present the magnetization distribution during the reversal process, revealing different mechanisms depending on the wire width. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：297 / 300
页数：4
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