Field effect transport properties of chemically treated graphene quantum dots

被引：6
作者：
Kalita, Hemen [1 ]
Harikrishnan, V. [1 ]
Aslam, M. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2014年 / 11卷 / 1-4期
关键词：
graphene; quantum dots; p-type; mobility; hole dopant; adsorbates; nanotechnology; ELECTROCHEMICAL AVENUE; CARBON; NANOCRYSTALS; MOLECULES;
D O I：
10.1504/IJNT.2014.059811
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the field effect properties of lithographically fabricated FET with as-prepared graphene quantum dots (GQDs) and hydrazine treated GQDs as channel material. GQDs of 4.5 +/- 0.55 nm average diameter are synthesised via an electrochemical approach using multiwalled carbon nanotubes (MWCNTs) as precursor. After treatment in hydrazine vapour for 24 h, the field effect measurements yield hole mobility of 0.01 cm(2) V(-1)s(-1) and I-on/I-off ratio of about 45. Hydrazine treated channel shows a significant decrease in resistance in comparison to the channel with as-prepared GQDs and is p-type under ambient conditions.
引用
收藏
页码：75 / 84
页数：10
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