High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

被引：12

作者：

Cao, Tengfei ^{[1
]}

Zhang, Haibao ^{[1
]}

Yan, Binhang ^{[1
]}

Cheng, Yi ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Chem Engn, Beijing 100084, Peoples R China

来源：

RSC ADVANCES | 2013年 / 3卷 / 43期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; SOLAR-CELLS; LAYERS; SI;

D O I：

10.1039/c3ra43481h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising alternative for crystalline silicon (c-Si) in the photovoltaic industry. We proposed an atmospheric pressure thermal plasma enhanced CVD (APTPECVD) process for high rate deposition of nc-Si: H on silicon and glass substrates using SiCl4 as the deposition precursor. The deposition rate under typical operating conditions could reach 9.78 nm s(-1), and the deposited nc-Si: H film thickness could reach 17.6 mu m. The grain diameter and crystalline fraction of the deposition product were characterized using SEM, TEM, Raman spectroscopy and XRD. The photoluminescence performance at room temperature was discovered.

引用

页码：20157 / 20162

页数：6

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