Dependency of Arabidopsis thaliana Growth on DC Electric Field Intensity

被引：10

作者：

Okumura, Takamasa ^{[1
]}

Muramoto, Yuji ^{[1
]}

Shimizu, Noriyuki ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2014年 / 21卷 / 02期

关键词：

Electric field; plant growth; Arabidopsis thaliana; ELECTROSTATIC-FIELD; SEED-GERMINATION; MAGNETIC-FIELD; YIELD; PLASMA; WHEAT;

D O I：

10.1109/TDEI.2013.004085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.

引用

页码：913 / 917

页数：5

共 16 条

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