Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology

被引：87

作者：

Liu, Zhao Jun ^{[1
]}

Wong, Ka Ming ^{[1
]}

Keung, Chi Wing ^{[1
]}

Tang, Chak Wah ^{[1
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 04期

关键词：

Active arrays; displays; flip-chip devices; gallium compounds; LEDs; LIGHT-EMITTING-DIODES; OHMIC CONTACTS; NITRIDE; DENSITY;

D O I：

10.1109/JSTQE.2009.2015675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic high-resolution (individual pixel size 300 x 300 mu m(2)) active matrix (AM) programmed 8 x 8 micro-LED array was fabricated using flip-chip technology. The display was composed of an AM panel and a LED microarray. The AM panel included driving circuits composed of p-type MOS transistors for each pixel. The n-electrodes of the LED pixels in the microarray were connected together, and the p-electrodes were connected to individual outputs of the driving circuits on the AM panel. Using flip-chip technology, the LED microarray was then flipped onto the AM panel to create a microdisplay.

引用

页码：1298 / 1302

页数：5

共 8 条

[1] Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors [J].

Chang, S. J. ;

Chen, W. S. ;

Lin, Y. C. ;

Chang, C. S. ;

Ko, T. K. ;

Hsu, Y. P. ;

Shen, C. F. ;

Tsai, J. M. ;

Shei, S. C. .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2006, 29 (03) :403-408

[2] Nitride-based flip-chip ITO LEDs [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Lee, CT ;

Chen, WS ;

Shen, CF ;

Hsu, YP ;

Shei, SC ;

Lo, HM .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (02) :273-277

[3] Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES) [J].

Chilukuri, Kamesh ;

Mori, Michael J. ;

Dohrman, Carl L. ;

Fitzgerald, Eugene A. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (02) :29-34

[4] High-resolution 128 x 96 nitride microdisplay [J].

Choi, HW ;

Jeon, CW ;

Dawson, MD .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) :277-279

[5] High-density matrix-addressable AlInGaN-Based 368-nm microarray light-emitting diodes [J].

Jeon, CW ;

Choi, HW ;

Gu, ER ;

Dawson, MD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) :2421-2423

[6] Fabrication of matrix-addres sable InGaN-based microdisplays of high array density [J].

Jeon, CW ;

Choi, HW ;

Dawson, MD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (11) :1516-1518

[7] III-nitride blue microdisplays [J].

Jiang, HX ;

Jin, SX ;

Li, J ;

Shakya, J ;

Lin, JY .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1303-1305

[8] Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts [J].

Song, JO ;

Leem, DS ;

Kwak, JS ;

Park, Y ;

Chae, SW ;

Seong, TY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) :291-293

← 1 →