N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films

被引：9

作者：

Mazaki, Koji ^{[1
]}

Tabata, Akimori ^{[1
]}

Kitagawa, Akihiko ^{[2
]}

Kondo, Akihiro ^{[2
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 12期

关键词：

Microcrystalline silicon; N-2; decomposition; Thin films; Hot-wire; Post-deposition treatment; X-ray photoelectron spectroscopy; Fourier-transform infrared(FT-IR); CHEMICAL-VAPOR-DEPOSITION; CAT-CVD; DISSOCIATION; TEMPERATURE; ATOMS;

D O I：

10.1016/j.tsf.2009.01.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Post-deposition treatment of hydrogenated microcrystalline silicon (mu c-Si:H) was carried out using a hot wire in atmospheres of N-2, N-2/H-2 or H-2 and the states of the bonds in the mu c-Si:H films were investigated using X-ray photoelectron spectroscopy. For the mu c-Si:H film treated in N-2 at the filament temperature (T-f) of 1600 degrees C a weak N1s peak was observed. It increased slightly with increasing T-f from 1600 to 1900 degrees C and increased dramatically with increasing T-f from 1900 to 2000 degrees C. The N1s peak of the pc-Si:H film treated in N-2/H-2 at T-f = 2000 degrees C was one order of magnitude lower than that in N-2 at T-f = 2000 degrees C These findings indicate that N-2 molecules decompose on the heated filament and that the addition of H-2 prevents N-2 decomposition. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3452 / 3455

页数：4

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