Radiation Damage Effects on Epitaxial Silicon Devices for the PANDA Hybrid Pixel Detector

被引：0
|
作者：
Braghieri, A. [1 ]
Busso, L. [2 ,3 ]
Calvo, D. [3 ]
De Remigis, P. [3 ]
Jaeckel, R. [4 ]
Montagna, P. [1 ,6 ]
Morra, O. [3 ,5 ]
Wheadon, R. [3 ]
机构：
[1] Ist Nazl Fis Nucl, Sez Pavia, I-27100 Pavia, Italy
[2] Univ Turin, Dept Fis, Turin, Italy
[3] Ist Nazl Fis Nucl, Sez Torino, Turin, Italy
[4] Tech Univ Dresden, Dresden, Germany
[5] Univ Turin, Ist Nazl Fis Nucl, IFSI, Sez Torino, I-10124 Turin, Italy
[6] Univ Pavia, Dept Fis Nucl, I-27100 Pavia, Italy
来源：
2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年
关键词：
D O I：
暂无
中图分类号：
R8 [特种医学]; R445 [影像诊断学];
学科分类号：
1002 ; 100207 ; 1009 ;
摘要：
The aim of this work is to report first results of radiation effects induced by neutrons on epitaxial silicon devices with high resistivity. The epitaxial silicon material has been widely studied over the last few years (RD50...) and displays interesting performance regarding its eventual use in the PANDA pixel detector. Radiation damage measurement of some parameters of epitaxial diodes with three different epitaxial layer thickness have been performed for fluences corresponding to 1, 3 and 10 years of PANDA lifetime.
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页码：1814 / +
页数：2
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