A 94 GHz monolithic high output power amplifier

被引：0

作者：

Huang, P

Lin, E

Lai, R

Biedenbender, M

Huang, TW

Wang, H

Geiger, C

Block, T

Liu, PH

机构：

来源：

1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage monolithic W-band power amplifier using 0.1-mu m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300mW with 10.5% peak power-added efficiency at 94GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

引用

页码：1175 / 1178

页数：4