Measurement of the Peltier coefficient of semiconductors by lock-in thermography

被引:46
|
作者
Straube, Hilmar [1 ]
Wagner, Jan-Martin [1 ]
Breitenstein, Otwin [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
diffusion; elemental semiconductors; infrared imaging; Peltier effect; silicon; solar cells; thermal resistance; SOLAR-CELLS; SILICON;
D O I
10.1063/1.3194156
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lock-in thermography is applied to image Joule heating and Peltier-type heat transport separately. Images obtained for a multicrystalline silicon solar cell are quantitatively evaluated using an integration method. The results are interpreted in terms of diffusion and electron/hole drag contributions. The approach presented is especially interesting where the thermal contact resistance to the sample is a problem and where versatility with respect to sample geometry is needed. A further advantage of the method is that it does not need any separate power or temperature calibration.
引用
收藏
页数:3
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