Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts

被引：35

作者：

Imanishi, Shoichiro ^{[1
]}

Kudara, Ken ^{[1
]}

Ishiwata, Hitoshi ^{[1
]}

Horikawa, Kiyotaka ^{[1
]}

Amano, Shotaro ^{[1
]}

Iwataki, Masayuki ^{[1
]}

Morishita, Aoi ^{[1
]}

Hiraiwa, Atsushi ^{[1
]}

Kawarada, Hiroshi ^{[1
]}

机构：

[1] Waseda Univ, Inst Nanosci & Nanoengn, Fac Sci & Engn, Kagami Mem Lab Mat Sci & Technol,Shinju Ku, Tokyo 1698555, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 02期

关键词：

Diamond; Two dimensional hole gas; Ohmic contacts; Logic gates; MOSFET; Electrodes; Contact resistance; high frequency; contact resistance; ON-resistance;

D O I：

10.1109/LED.2020.3047522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with microwave plasma chemical vapor deposition (MPCVD)-regrown p(++)-diamond (B concentration similar to 1x10(22) /cm(3)) ohmic contacts. The heavily doped p(++)-diamond shows low ohmic contact resistance of 1.1 Omega center dot mm, which is the lowest value reported in diamond to date. In addition, the p(++)-diamond with a TiC also offers much stronger metal adhesion when compared with previous Au/hydrogen- terminated diamond surfaces and is suitable for industrial use. Benefiting from the low contact resistance of the p(++)-diamond layer, a maximum drain current density of 1170 mA/mm and an ON-resistance of 8.9 Omega center dot mm were demonstrated in a 2DHG diamond metal-oxide-semiconductor FET with a 1 mu m gate length. These results indicate that the regrown p(++)-diamond ohmic contacts will make it possible to realize further improvements in themaximumdrain current density of 2DHG diamond FETs.

引用

页码：204 / 207

页数：4

共 23 条

[1] Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors [J].