Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

被引：4

作者：

Bakhadyrkhanov, M. K. ^{[1
]}

Ismaylov, B. K. ^{[2
]}

Tachilin, S. A. ^{[1
]}

Ismailov, K. A. ^{[2
]}

Zikrillaev, N. F. ^{[1
]}

机构：

[1] Tashkent State Tech Univ, Univ Skaya Str 2, Tashkent 100095, Uzbekistan

[2] Karakalpak State Univ, Ch Abdirov Str 1, Nukus 230112, Kar, Uzbekistan

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2020年 / 23卷 / 04期

关键词：

clusters of nickel atoms; lifetime; diffusion; thermal donors; thermal stability; electrical parameters; gettering; DONORS;

D O I：

10.15407/spqeo23.04.361

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 degrees C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100 ... 1200 degrees C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.

引用

页码：361 / 365

页数：5

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