corrosion resistance;
FeXN;
high-saturation magnetic materials;
magnetic properties;
microstructures;
reactive sputtering;
recording heads;
D O I:
10.1109/20.825827
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We:have investigated high-saturation FeMoN and FeRhN films, deposited by radio frequency -diode reactive sputtering on alumina-TiC substrates, for inductive head applications, A minimum coercivity of similar to 1.2 Oe is obtained in (Fe97.8Mo2.2)N films:at a N-2/Ar flow ratio of similar to 6.2%, A minimum coercivity of similar to 1.6 Oe is obtained in (Fe96.9Rh3.1)N films at a N2/Ar flow ratio of similar to 4.6%. The films mainly consist of alpha-Fe phase and gamma'-Fe4N phase, The magnetic properties of these films are stable under easy-axis field:annealing up to 350 degrees C. Addition of Rh or Mo to FeN has resulted in a significant improvement in corrosion resistance over that of FeN, The localized corrosion resistance of FeRhN and FeMoN can be comparable to that of Permalloy, In contrast, their,intrinsic corrosion resistance is inferior to that of Permalloy, but it can be adjusted and controlled by pH level.
机构:
Stanford Univ, Dept Mat Sci & Engn, Ctr Res Informat Storage Mat, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Ctr Res Informat Storage Mat, Stanford, CA 94305 USA
Wang, SX
Hong, JG
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机构:Stanford Univ, Dept Mat Sci & Engn, Ctr Res Informat Storage Mat, Stanford, CA 94305 USA
机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Li, Jun
Li, Zhiye
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机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Li, Zhiye
Li, Yulin
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机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Li, Yulin
Ge, Jiahao
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机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Ge, Jiahao
Li, Yuxiao
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机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Li, Yuxiao
Zeng, Lubin
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机构:
Suzhou Inn Mag New Energy Ltd, Suzhou 215000, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Zeng, Lubin
Pei, Ruilin
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机构:
Shenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China
Suzhou Inn Mag New Energy Ltd, Suzhou 215000, Peoples R ChinaShenyang Univ Technol, Dept Elect Engn, Shenyang 110870, Peoples R China