On the structure and electron photodetachment spectra of Ga3P- and Ga3As-

被引：18

作者：

Archibong, EF

St-Amant, A

Goh, SK

Marynick, DS

机构：

[1] Univ Ottawa, Dept Chem, Ottawa, ON K1N 6N5, Canada

[2] Univ Texas, Dept Biochem & Chem, Arlington, TX 76019 USA

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 361卷 / 5-6期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S0009-2614(02)00902-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The main features of the Ga3P- photodetachment spectrum reported by Taylor, Asmis, Xu and Neumark [Chem. Phys. Lett. 297 (1998) 133] have been assigned. Ga3P- has a B-2(2) (C-2v) ground state. A near degeneracy is found between the (1)A(1) (C-2v) and the (1)A(1) (C-3v) states of Ga3P. The observed peaks are assigned to Ga3P states with C-2v structure. In line with Ga3P, the (1)A(1)(C-2v) and (1)A(1)(C-3v) states of Ga3As are nearly degenerate. Electron detachment processes are presented and discussed for the Ga3As-/Ga-3 As system on the basis of a C-2v ground state geometry for the anion and the neutral molecule. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：411 / 420

页数：10

共 27 条

[1] Structure and electron detachment energies of Al3P- and Al3P3- [J].