PUNISM: An advanced surface potential based MOSFET model

被引：3

作者：

He, J. ^{[1
]}

Song, Y. ^{[1
]}

Niu, X. ^{[1
]}

Li, B. ^{[1
]}

Zhang, X. ^{[1
]}

Huang, R. ^{[1
]}

Chan, M. ^{[2
]}

Wang, Y. ^{[1
]}

机构：

[1] Peking Univ, Sch EECS, Dept Microelect, Beijing 100871, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept EEE, Kowloon, Hong Kong, Peoples R China

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2006年

关键词：

MOSFETs; Nanoscale Technology; Device Physics; Compact Modelling; Surface potential Solution; Advanced MOSFET Model; PUNSIM; Parameter Extraction; Model Verification;

D O I：

10.1109/MIXDES.2006.1706549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews present compact model development and outlines the main features of the PUNISM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; Accurate description of inversion charge; Physics based channel current equation and calculation; Self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity.

引用

页码：111 / +

页数：2

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