Chemical Nature of Electrode and the Switching Response of RF-Sputtered NbOx Films

被引：32

作者：

Aziz, Jamal ^{[1
]}

Kim, Honggyun ^{[1
]}

Rehman, Shania ^{[1
]}

Khan, Muhammad Farooq ^{[1
]}

Kim, Deok-kee ^{[1
]}

机构：

[1] Sejong Univ, Dept Elect Engn, 209 Neungdong Ro, Seoul 05006, South Korea

来源：

NANOMATERIALS | 2020年 / 10卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

threshold switching; resistive switching; inert electrode; interfacial oxide layer; SELECTION DEVICE; NIOBIUM; MEMORY; OXIDES; ARRAY; RAMAN;

D O I：

10.3390/nano10112164

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, the dominant role of the top electrode is presented for Nb2O5-based devices to demonstrate either the resistive switching or threshold characteristics. These Nb2O5-based devices may exhibit different characteristics depending on the selection of electrode. The use of the inert electrode (Au) initiates resistive switching characteristics in the Au/Nb2O5/Pt device. Alternatively, threshold characteristics are induced by using reactive electrodes (W and Nb). The X-ray photoelectron spectroscopy analysis confirms the presence of oxide layers of WOy and NbOx at interfaces for W and Nb as top electrodes. However, no interface layer between the top electrode and active layer is detected in X-ray photoelectron spectroscopy for Au as the top electrode. Moreover, the dominant phase is Nb2O5 for Au and NbO2 for W and Nb. The threshold characteristics are attributed to the reduction of Nb2O5 phase to NbO2 due to the interfacial oxide layer formation between the reactive top electrode and Nb2O5. Additionally, reliability tests for both resistive switching and threshold characteristics are also performed to confirm switching stabilities.

引用

页码：1 / 11

页数：11

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