Characteristics of La0.5Sr0.5CoO3 thin films fabricated by a simple metal-organic decomposition technique

被引:5
作者
Kim, KT
Kim, CI
Kim, TH
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[2] Yeojoo Tech Coll, Dept Elect Engn, Kyunggido 469800, South Korea
关键词
LSCO; thin film; MOD; FeRAM; PZT;
D O I
10.1016/j.vacuum.2004.01.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
La0.5Sr0.5CoO3 (LSCO) thin films were prepared using metal-organic decomposition method by spin-coating onto a Si (10 0) substrate. Both the structure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. The LSCO thin films annealed at 550-700degreesC for 1 h showed a polycrystalline phase and dense microstructure. The results indicate the LSCO film shows good metallic properties. The resistivity of LSCO films annealed at 650degreesC showed minimum value of 0.354 X 10(-4) Omegacm. Pb(Zr,Ti)O-3 (PZT) thin films grown on LSCO thin films showed no favored orientation and excellent ferroelectricity. The remanent polarization P-r and coercive field E-c are 19.5 muC/cm(2) and 1.38 V, respectively. Additionally, the PZT thin films deposited on LSCO substrate exhibited no significant degradation of switching charge at least up to 5 x 109 switching cycles at a frequency of 100 kHz below cycling fields of 5 V. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:671 / 675
页数:5
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