Observation of supercurrent enhancement in SNS junctions by nonequilibrium injection into supercurrent carrying bound Andreev states

被引：33
作者：
Kutchinsky, J
Taboryski, R
Sorensen, CB
Hansen, JB
Lindelof, PE
机构：
[1] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
[2] Danish Inst Fundamental Metrol, DK-2800 Lyngby, Denmark
[3] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.83.4856
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SN-SNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias V = Δ(T)/e, the dc Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a nonequilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished. © 1999 The American Physical Society.
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页码：4856 / 4859
页数：4
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