Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

被引：215

作者：

Pai, Chi-Feng ^{[1
]}

Nguyen, Minh-Hai ^{[1
]}

Belvin, Carina ^{[2
]}

Vilela-Leao, Luis Henrique ^{[1
]}

Ralph, D. C. ^{[1
,3
]}

Buhrman, R. A. ^{[1
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

[2] Wellesley Coll, Dept Phys, Wellesley, MA 02481 USA

[3] Kavli Inst Cornell, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

关键词：

EFFECTIVE-FIELD; DOMAIN-WALLS; TRANSITION; DRIVEN; TORQUE; DEPENDENCE; MGO;

D O I：

10.1063/1.4866965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 31 条

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