Composition-dependent thermoelectric properties of PbTe doped with Bi2Te3

被引：12
|
作者：
Zhu, Pinwen [1 ]
Imai, Yoshio
Isoda, Yukihiro
Shinohara, Yoshikazi
Jia, Xiaopeng
Zou, Guangtian
机构：
[1] Natl Inst Mat Sci, Ecomat Res Ctr, Tsukuba, Ibaraki 3050047, Japan
[2] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2006年 / 420卷 / 1-2期
基金：
中国国家自然科学基金; 日本学术振兴会;
关键词：
thermoelectric properties; semiconductor compounds; PbTe; thermal conductivity;
D O I：
10.1016/j.jallcom.2005.09.078
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition-dependent thermoelectric properties of PbTe doped with Bi2Te3 have been studied at room-temperature. The electrical resistivity and the Seebeck coefficient in absolute value decrease with an increase of Bi2Te3. A sharp maximum in the Seebeck coefficient at 0.3 mol% Bi2Te3 indicates that an electronic topological transition is occurred in PbTe alloyed with Bi2Te3. The total thermal conductivity nearly keeps constant and the parts of lattice, which are much lower than those doped with PbI2 prepared by hot-pressing, linearly decrease with increasing Bi2Tc3. The figure of merit shows a maximum value of 7.63 x 10(-4) K-1, which is several times higher than that of PbTe containing other dopants. The high thermoelectric performance is explained by electronic topological transition induced by alloying. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 236
页数：4
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