Formation of precipitates in heavily boron doped 4H-SiC

被引：14
|
作者：
Linnarsson, M. K.
Janson, M. S.
Nordell, N.
Wong-Leung, J.
Schoner, A.
机构：
[1] Royal Inst Technol, Lab Mat & Semicond Phys, SE-16440 Kista, Sweden
[2] Australian Natl Univ, Dept Elect Mat Engn, Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
[3] ACREO AB, SE-16440 Kista, Sweden
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期
关键词：
SIMS; TEM; SiC; B; solubility limit; precipitates;
D O I：
10.1016/j.apsusc.2005.12.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 degrees C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10(22) exp(-1.4 eV/k(B)T) cm(-3) over the studied temperature range. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：5316 / 5320
页数：5
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