Semi-Empirical Aging Model Development Via Accelerated Aging Test

被引：0

作者：

Afacan, Engin ^{[1
]}

Dundar, Gunhan ^{[1
]}

Pusane, Ali E. ^{[1
]}

Baskaya, Faik ^{[1
]}

机构：

[1] Bogazici Univ, Dept Elect & Elect Engn, Bebek, Turkey

来源：

2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD) | 2016年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.

引用

页数：4

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