Fabrication of bistable switching device using CdS nanorods embedded in PMMA (polymethylmethacrylate) nanocomposite

An organic bistable memory device was fabricated using CdS NR's/PMMA (polymethylmethacrylate) nanocomposite sandwiched between ITO and Al thin film. XRD analysis confirmed that CdS NR's reveals wurtzite hexagonal phase. FESEM and TEM images showed the monodispersed rod-like morphology. The nanorods were uniformly dispersed in the PMMA (polymethylmethacrylate) layer. EDX spectrum confirms that the product consists of only Cd and S elements. No other impurities were found. UV-visible absorption of CdS NR's showed a slight blue shift. The photoluminescence spectra of CdS NR's spectra showed surface defects which may be due to sulfur vacancies in surface of nanorods. The CdS NR's polymer nanocomposite showed better thermal stability. The current-voltage (C-V) measurement of ITO/CdS NR's/Al showed a clockwise hysteresis with flatband shift voltage in C-V curve for the device.