InGaAs/AlGaAs quantum well laterally-coupled distributed feedback laser

被引：14

作者：

Das, PK ^{[1
]}

Uemukai, M ^{[1
]}

Suhara, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 5A期

关键词：

semiconductor lasers; DFB lasers; ridge structure laser diodes; integrated optoelectronics;

D O I：

10.1143/JJAP.43.2549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAs/AlGaAs quantum well laterally-coupled distributed feedback (LC-DFB) laser is designed and fabricated by electron beam lithography and reactive ion etching. The LC-DFB laser eliminates the need of a crystal regrowth in a conventional DFB laser fabrication process. A single mode lasing at a wavelength of 967.8 nm with a side mode suppression ratio of 46 dB was achieved under CW operation at room temperature. The threshold current and maximum peak output power were 15 mA and 19 mW at 90 mA injection, respectively.

引用

页码：2549 / 2550

页数：2

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