Field-effect modulated Seebeck coefficient measurements in an organic polymer using a microfabricated on-chip architecture

被引：40

作者：

Venkateshvaran, D. ^{[1
]}

Kronemeijer, A. J. ^{[1
]}

Moriarty, J. ^{[1
]}

Emin, D. ^{[2
]}

Sirringhaus, H. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Optoelect Grp, Cambridge CB3 0HE, England

[2] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

来源：

APL MATERIALS | 2014年 / 2卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

THERMOELECTRIC-MATERIALS; SEMICONDUCTORS; HETEROSTRUCTURES; ENHANCEMENT; PERFORMANCE; TRANSISTORS;

D O I：

10.1063/1.4867224

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We developed an on-chip microfabricated architecture for high-accuracy gate voltage modulated Seebeck coefficient measurements on an organic field-effect transistor (FET). The microfabricated device comprises integrated heaters and temperature sensors that enable simultaneous Seebeck and FET measurements on devices with practical channel lengths on the order of 50 mu m. We exemplify the capabilities of this architecture by investigating the transition from conduction in the semiconductor bulk to conduction in the accumulation layer of a conjugated polymer FET. (C) 2014 Author(s).

引用

页数：6

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