Tin oxide (SnO2) as effective electron selective layer material in hybrid organic-inorganic metal halide perovskite solar cells

被引:46
作者
Yang, Guang [1 ,2 ,3 ]
Qin, Pingli [1 ,2 ]
Fang, Guojia [3 ]
Li, Gang [1 ,2 ]
机构
[1] Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Guangdong, Peoples R China
[2] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China
[3] Wuhan Univ, Sch Phys & Technol, Minist Educ China, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Tin oxide; Electron selective layers; Perovskite solar cells; Low temperature preparation; TRANSPORTING LAYERS; HOLLOW MICROSPHERES; CRYSTALLINE SNO2; THIN-FILM; EFFICIENT; PERFORMANCE; TEMPERATURE; NANOCRYSTALS; STABILITY; EXTRACTION;
D O I
10.1016/j.jechem.2018.03.018
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The emergence of hybrid organic-inorganic metal halide perovskite solar cells (PSCs) causes a breakthrough in the solar technology recently due to its superior optoelectronic properties and the low-cost fabrication processes. The dramatic enhancement in power conversion efficiency (PCE) of PSCs from 3.8% in 2009 to the recent certified record PCE of 22.7% indicates huge potential of PSCs for future high efficiency and large scale photovoltaic manufacturing. The electron selective layer (ESL) plays an important role in electron extraction and hole blocking function in PSCs, and there have been great interest in developing efficient ESL materials. Recently, tin oxide (SnO2) as an ESL has attracted significant research attentions owing to its low temperature preparation processes as well as yielding high PCE and good stability of PSCs. In this perspective article, we focus on the development progress of SnO2 as an ESL in PSCs, and discuss the strategies for preparing SnO2 to achieve PSCs with high efficiency, less hysteresis and good device stability. (C) 2018 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.
引用
收藏
页码:962 / 970
页数:9
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