Strongly index-guided II-VI laser diodes

被引：9

作者：

Legge, M ^{[1
]}

Bacher, G ^{[1
]}

Bader, S ^{[1
]}

Forchel, A ^{[1
]}

Lugauer, HJ ^{[1
]}

Waag, A ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 03期

关键词：

beryllium compounds; index guiding; leakage current; quantum-well lasers; ridge waveguides;

D O I：

10.1109/68.826899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge-waveguide laser diodes based on Be-chalcogenides have been fabricated by reactive ion etching and planarization with polyimide. Etching close to or even through the active layer is demonstrated to suppress the current spreading efficiently, resulting in a signficant reduction of the threshold current as compared to gain-guided structures. This allows the fabrication of narrow, strongly index-guided II-VI laser diodes with a ratio between the vertical and the lateral far-field angle of, e.g., 1.2:1 for L-x = 1 mu m.

引用

页码：236 / 238

页数：3

共 6 条

[1] Room temperature emission in narrow (14nm) Cd0.35Zn0.65Se/ZnSe quantum wires with strong lateral confinement effects [J].