A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs

被引：0
|
作者：
Souto, J. [1 ]
Pura, J. L. [1 ]
Torres, A. [1 ]
Jimenez, J. [1 ]
机构：
[1] Univ Valladolid, GdS Optronlab, Paseo Belen 19, E-47011 Valladolid, Spain
来源：
HIGH-POWER DIODE LASER TECHNOLOGY XVII | 2019年 / 10900卷
关键词：
High Power laser diodes; catastrophic degradation; cathodoluminescence (CL); thermal stress; thermal conductivity; OPTICAL STRENGTH; DEFECT;
D O I：
10.1117/12.2507435
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Strained InGaAs QW lasers present a high power threshold for catastrophic optical damage (COD) as compared to lattice matched AlGaAs QW lasers. The reason for the higher resilience of strained QW lasers is not yet well understood. We analyze the catastrophic optical damage (COD) as a consequence of the dislocations generated by local thermal stresses. The thermomechanical problem is solved for both strained and lattice matched QW lasers. Also, we analyze the role played by point defects in both lasers as root causes of the degradation. The main factors contributing to the robustness of strained QW lasers are discussed.
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页数：6
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