Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

被引：16

作者：

Hiraki, Tatsurou ^{[1
,2
]}

Aihara, Takuma ^{[1
]}

Takeda, Koji ^{[1
,2
]}

Fujii, Takuro ^{[1
,2
]}

Kakitsuka, Takaaki ^{[1
,2
]}

Tsuchizawa, Tai ^{[1
,2
]}

Fukuda, Hiroshi ^{[1
,2
]}

Matsuo, Shinji ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Nanophoton Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 13期

关键词：

SILICON; INP;

D O I：

10.1364/OE.27.018612

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-mu m-long phase shifter shows a V pi L of 0.4 Vcm, insertion loss of similar to 4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：18612 / 18619

页数：8

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