Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

被引：15

作者：

Hiraki, Tatsurou ^{[1
,2
]}

Aihara, Takuma ^{[1
]}

Takeda, Koji ^{[1
,2
]}

Fujii, Takuro ^{[1
,2
]}

Kakitsuka, Takaaki ^{[1
,2
]}

Tsuchizawa, Tai ^{[1
,2
]}

Fukuda, Hiroshi ^{[1
,2
]}

Matsuo, Shinji ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Nanophoton Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 13期

关键词：

SILICON; INP;

D O I：

10.1364/OE.27.018612

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-mu m-long phase shifter shows a V pi L of 0.4 Vcm, insertion loss of similar to 4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：18612 / 18619

页数：8

共 15 条

[1] Aihara T., 2018, P OPT FIB COMM C 201
[2] Aihara T., 2019, P OFC 2019
[3] CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP
BENNETT, BR
SOREF, RA
DELALAMO, JA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) : 113 - 122
[4] High speed hybrid silicon evanescent Mach-Zehnder modulator and switch
Chen, Hui-Wen
Kuo, Ying-Hao
Bowers, John E.
[J]. OPTICS EXPRESS, 2008, 16 (25) : 20571 - 20576
[5] A Hybrid Silicon-AlGaInAs Phase Modulator
Chen, Hui-Wen
Kuo, Ying-Hao
Bowers, John E.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 1920 - 1922
[6] Eight-Channel SiO2/Si3N4/Si/Ge CWDM Receiver
Doerr, C. R.
Chen, L.
Buhl, L. L.
Chen, Y. -K.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (17) : 1201 - 1203
[7] Fan Y., 2017, P CLEO 2017
[8] High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides
Feng, Ning-Ning
Liao, Shirong
Feng, Dazeng
Dong, Po
Zheng, Dawei
Liang, Hong
Shafiiha, Roshanak
Li, Guoliang
Cunningham, John E.
Krishnamoorthy, Ashok V.
Asghari, Mehdi
[J]. OPTICS EXPRESS, 2010, 18 (08): : 7994 - 7999
[9] Heterogeneously Integrated Membrane Lasers on Si Substrate for Low Operating Energy Optical Links
Fujii, Takuro
Takeda, Koji
Diamantopoulos, Nikolaos-Panteleimon
Kanno, Erina
Hasebe, Koichi
Nishi, Hidetaka
Nakao, Ryo
Kakitsuka, Takaaki
Matsuo, Shinji
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (01)
[10] Hiraki T., 2018, P ECOC 2018

← 1 2 →