Laser-induced thermoelectric voltage in normal state MgB2 thin films

被引：10
作者：
Zhao, Songqing
Zhou, Yueliang [1 ]
Zhao, Kun
Wang, Shufang
Chen, Zhenghao
Jin, Kui-juan
Lu, Huibin
Cheng, Bolin
Yang, Guozhen
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China
[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 05期
关键词：
MgB2 thin films; laser-induced voltage; thermoelectric effect;
D O I：
10.1016/j.apsusc.2006.05.033
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Laser-induced voltage has been observed in c-axis oriented MgB2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB2. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2671 / 2673
页数：3
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