Effect of deposition temperature on the microstructure and dielectric properties of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency magnetron sputtering

被引：1

作者：

Feng, Zuyong ^{[1
]}

Chen, Wei ^{[1
]}

Tan, Ooi Kiang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 07期

关键词：

TUNABILITY; (BA; DESIGN; LAYER;

D O I：

10.1002/pssa.200925045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba0.6Sr0.4TiO3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 degrees C, well-crystallized BST film was deposited. The dielectric constant and dielectric loss of the film deposited at 600 degrees C are 300 and 0.033 at 100 kHz, respectively. Due to the good crystallinity of the BST films deposited by RF magnetron sputtering, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1510 / 1514

页数：5

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