Fabrication of gap-optimized cMUT

被引:16
作者
Ahrens, O [1 ]
Buhrdorf, A [1 ]
Hohlfeld, D [1 ]
Tebje, L [1 ]
Binder, J [1 ]
机构
[1] Univ Bremen, IMSAS, D-2800 Bremen 33, Germany
关键词
D O I
10.1109/TUFFC.2002.1041549
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
A recently introduced set up of capacitive micromachined ultrasonic transducers (cMUT) combines a conductive membrane above a structured sacrificial layer [1]. All previous approaches either require an additional metallic electrode [2], [3] or do not possess a structured sacrificial layer [4] and, consequently, may make exact adjustment of the membrane dimensions difficult. The present set ups are especially suited for the fabrication of cMUT with gap heights ranging between 50 nm and 2 mum be tween the electrodes. Large gaps are a prerequisite to enabling sufficient deflections of the membrane and, therewith, to generating high pressure gradients. On the other hand, small gap sizes are desirable for detecting weak ultrasonic sources. This paper focuses on the fabrication process of cMUT to realize electrode separation above 500 nm and, in addition, on the manufacturing of cMUT with gaps below 500 nm. The successful realization has been proven by some basic experimental investigations. Finally, the fundamental equations of a frequently chosen simulation model are documented, as a number of ambiguities exist in the common literature.
引用
收藏
页码:1321 / 1329
页数:9
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