Optical and electrical properties of polymerizing plasmas and their correlation with DLC film properties

被引:18
作者
Rangel, EC
da Cruz, NC
Kayama, ME
Rangel, RCC
Marins, N
Durrant, SF
机构
[1] Univ Estadual Paulista, Lab Plasmas Tecnol, BR-51118087 Sonocaba, SP, Brazil
[2] Univ Estadual Paulista, Lab Plasmas, Dept Fis & Quim, BR-12516410 Guaratingueta, SP, Brazil
[3] Univ Vale Paraiba, Lab Deposicao Vapor Quim, Inst Pesquisa & Desenvolvimento, BR-12244000 Sao Jose Dos Campos, SP, Brazil
关键词
optical emission spectroscopy; electron density; electron temperature diamond-like carbon; optical gap; electrical resistivity;
D O I
10.1023/B:PAPO.0000039813.33634.c6
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Diamond-like carbon (DLC) films were grown from radiofrequency plasmas of acetylene-argon mixtures, at different excitation powers, P. The effects of this parameter on the plasma potential, electron density, electron temperature, and plasma activity were investigated using a Langmuir probe. The mean electron temperature increased from about 0.5 to about 7.0 eV while the mean electron density decreased from about 1.2x10(9) to about 0.2x10(9) cm(-3) as P was increased from 25 to 150 W. Both the plasma potential and the plasma activity were found to increase with increasing P. Through actinometric optical emission spectrometry, the relative concentrations of CH, [CH], and H, [H], in the discharge were mapped as a function of the applied power. A rise in [H] and a fall in [CH] with increasing P were observed and are discussed in relation to the plasma characteristics and the subimplantation model. The optical properties of the films were calculated from ultraviolet-visible spectroscopic data; the surface resistivity was measured by the two-point probe method. The optical gap, E-G, and the surface resistivity, rho(s), fall with increasing P. E-G and rho(s) are in the ranges of about 2.0-1.3 eV and 10(14)-10(16) Omega/square, respectively. The plasma power also influences the film self-bias, V-b, via a linear dependence, and the effect of V-b on ion bombardment during growth is addressed together with variation in the relative densities of sp(2) and sp(3) bonds in the films as determined by Raman spectroscopy.
引用
收藏
页码:1 / 22
页数:22
相关论文
共 34 条
[1]  
ANGUS JC, 1991, MAT RES S C, P11
[2]   Stability of plasma-deposited amorphous hydrogenated boron films [J].
Annen, A ;
Sass, M ;
Beckmann, R ;
Jacob, W .
THIN SOLID FILMS, 1997, 300 (1-2) :101-106
[3]  
[Anonymous], PLASMA DEPOSITION TR
[4]   MODELING STUDIES OF AMORPHOUS-CARBON [J].
BEEMAN, D ;
SILVERMAN, J ;
LYNDS, R ;
ANDERSON, MR .
PHYSICAL REVIEW B, 1984, 30 (02) :870-875
[5]  
CISNEROS JI, 1991, NOTA EXPT, V2, P5
[6]   Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy [J].
Clay, KJ ;
Speakman, SP ;
Amaratunga, GAJ ;
Silva, SRP .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :7227-7233
[7]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[8]   SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
DEBENEDICTIS, S ;
FERRARO, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265
[9]   FLUORINATED DIAMOND-LIKE CARBON-FILMS DEPOSITS FROM RADIOFREQUENCY GLOW-DISCHARGE IN A TRIODE REACTOR [J].
DAGOSTINO, R ;
LAMENDOLA, R ;
FAVIA, P ;
GIQUEL, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02) :308-313
[10]   A SIMPLE-MODEL FOR THE FORMATION OF COMPRESSIVE STRESS IN THIN-FILMS BY ION-BOMBARDMENT [J].
DAVIS, CA .
THIN SOLID FILMS, 1993, 226 (01) :30-34